射频溅射 meaning in Chinese
radio frequency sputtering
radio-frequency sputtering
rf sputtering
Examples
- Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon
用射频溅射法在si衬底上制备立方氮化硼，靶材为hbn ， 。工作气体为氩气。 - Cdte films deposited by close space sublimation have better appearance and larger grain than the films deposited by rf - sputtering and vacuum thermal evaporation
近距离升华法制备的cdte薄膜与射频溅射和真空蒸发相比，具有其独有的特性。 - Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system , with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )
使用射频溅射( rf )系统,靶材为烧结的六角氮化硼( hbn ) ,工作气体为氩气(或氩气和氮气的混合气) ,在硅衬底上沉积氮化硼薄膜。 - The realization of the algorithm drives the research of micro - electron structure . 2 . the la2o3 thin film is prepared by rf technology , the film is analyzed by arxps , the thickness is calculated by quantitative analysis software , the thickness of sio2 thin film between la2o3 and si is 0 . 6nm
利用射频溅射镀膜技术在si片上制备了la _ 2o _ 3膜，通过变角xps分析和多层结构的定量计算，测得la _ 2o _ 3与si衬底之间的sio _ 2层厚度为0 . 6nm 。 - In the paper , the two - step approach , in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage , was used in order to synthesize c - bn film by the conventional js - 450a rf system . the influence of process parameters for nucleation and growth of depositing c - bn was studied separately
本论文使用传统的js - 450a射频溅射系统利用两步法（降温降偏压法）沉积立方氮化硼薄膜，分别研究了各工艺参数对立方氮化硼成核和生长的影响。