多晶矽 meaning in Chinese
poly-silicon tft lcd
Examples
- A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices
摘要提出一种二氧化矽多晶矽二氧化矽夹心深槽场限制环新结构来提高晶体管的击穿电压。 - One was a technique to lay down polysilicon so that each island of a single crystal is large enough to encompass many memory cells or transistors
第一种技术是铺陈多晶矽的技术，这项技术使每一个单晶矽岛变得足够大，因而能包含更多的记忆胞或电晶体。 - Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind , research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts
虽然电子在多晶矽中移动不如在单晶矽中那麽容易，但在这项研究做出来的三维电晶体里，电子的移动速率已达同类二维晶片的90 ~ 95 % 。 - Building directly on these 2 - d technologies , we have made 3 - d circuits by coating standard silicon wafers with many successive layers of polysilicon ( as well as insulating and metallic layers ) , polishing the surface flat after each step
利用这些传统的二维晶片技术，我们已做出三维电路：在标准的矽晶圆上，连续镀上好几层的多晶矽及绝缘层与金属层，每一层镀完后，都磨光晶圆表面。 - The effect of a few important geometrical and physical parameters which include the length of the active region , the thickness of the active region , bulk traps , interface traps , on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici
摘要利用高级二维器件模拟程序medici分析了多晶矽薄膜晶体管有源区的长度、体内陷阱、界面陷阱、栅氧化层厚度等几何参数及物理参数，并研究了这些参数对薄膜晶体管特性的影响。