外量子效率 meaning in Chinese
external quantum efficiency
Examples
- It can remarkable enhance the external quantum efficiency by changing the structure of faceplate and decrease the light loss , because if can change the direction of the ray , and avoids the light - wave effect
这正是本文研究的内容。这种方法通过改变器件的结构,降低光在器件内部全反射的损失,从而提高器件的外量子效率。 - The detector was characterized to have a cutoff wavelength at 340 nm and the photo - responsivity measurements on the pixels result a uv response as high as 0 . 15 a / w , corresponding to an external quantum efficiency of 54 . 8 % in the visible - blind spectral ranging from 400 down to 250 nm
该肖特基光电二极管阵列的光谱响应截止边为340nm 。在400nm至250nm的紫外光盲区域，光电响应测试显示该器件在截止边波长处具有0 . 15a / w的高响应度，相对应的外量子效率为54 . 8 。 - For being with many advantages , it has been an active subject in recent years and much progress has been made . on the basic of analysis of many kinds of led structures , a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission . through calculation of led external quantum efficiency , a method for design hb - led top layer was evaluated
本论文分析了当前国内外各种led的结构及其制作工艺，在技术上较为成熟的双异质结构基础上，我们在器件的有源区引入应变多量子阱结构，并根据实际需求增加补偿应变技术以保证发光层结构的稳定性；通过对器件外量子效率的计算，使得在器件设计有了定量的理论分析依据；并采用先进的涡轮lp - mocvd成功制备出galnp gaalinp应变多量子阱高亮度发光二极管器件。