复合速率 meaning in Chinese
recombination rate
Examples
- Dielectronic recombination coefficients of cu - like of au50 ion
类铜金离子的双电子复合速率系数 - From the experiment results and the normalization results , the surface recombination velocities of silicon pn junction were obtained
通过测量结果和计算结果的归一化比较，获得了其表面复合速率。 - Depending on the image method and point source approximation method , the physic model was established , and the formula of photo - current versus surface recombination velocity was obtained
导出了光电流与表面复合速率相应关系的计算公式，确定了可进行电量测量的实验装置。 - Using this method , the interface characteristics of angle beveled mesa structure high - voltage silicon pn junction protected by organic materials or inorganic passivation films were measured
采用此方法，测量了台面型高压硅半导体器件的无机钝化和有机保护界面的表面复合速率。 - Moreover , the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation , which further confirmed the film with the highest photocatalytic activity at 700 c . when the calcination temperature was higher than 700 c , the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area
同时，此时sio _ 2 / tio _ 2复合薄膜的荧光光谱显示最低的荧光强度，这表明此时薄膜中的光生电子和空穴的复合速率最低，因而更有利于物质的光催化降解。当热处理温度高于700时，武汉理工大学硕士学位论文薄膜的光催化活性下降，这是由于薄膜中晶相二氧化钦的烧结和成长导致样品的表面积下降以及金红石相的形成。