处理成功 meaning in Chinese
operation_succeeded
Examples
- It has failed to manage properly the problems of its success
该国未能妥善处理成功所带来的一些问题。 - The following configuration file excerpt shows how to specify a provider of type
下面的配置文件节选演示如何指定用于处理成功审核事件的 - Unless a man has been taught what to do with success after getting it , the achievement of it must inevitably leave him a prey to boredom
一个人除非学会了如何在获得成功后处理成功，否则，成功地达到无疑会使他成为厌倦的猎物。 - For example , if a batch has two statements and the second statement references a table that does not exist , deferred name resolution causes the batch to compile successfully and start execution without binding the missing table to the query plan until that statement is recompiled
例如，如果批处理含有两条语句并且第二条语句引用的表不存在，则延迟的名称解析会使该批处理成功进行编译并开始执行（无需将缺少的表绑定到查询计划） ，直到重新编译该语句为止。 - Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time , and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev , 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours , are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed , which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox . sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si , and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect . behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation , 600 is appropriate for the post - implantation treatment
Sige - simox工艺方面：首次采用硅( 100 )衬底上直接外延的100nm厚sige的样品中注入高剂量的o离子，通过退火处理成功制备了sige - oi新结构，即sige - simox工艺，证实了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )剂量的氧离子，随后在氧化层的保护下经1250 ， ar + 5 o _ 2气氛的高温退火( 5小时)过程，可以制备出sige - oi新型材料；实验中观察到退火过程中的ge损失现象，分析了其原因是ge挥发( ge通过表面氧化层以geo挥发性物质的形式进入退火气氛)和ge扩散( ge穿过离子注入形成的氧化埋层而进入si衬底中) ，其中ge扩散是主要原因；根据实验结果及实验中出现的问题，对下一步工作提出两个改进的方案：一是通过在si衬底中注入适量h ~ + / he ~ +形成纳米孔层来阻断ge扩散通路，二是可以通过控制表面氧化来调节安止额士淤丈捞要表面sige层中的ge组分，从而部分解决sige