基底温度 meaning in Chinese
base reservoir temperature
base temperature
basetemperature
Examples
- In this experiments , the influences of substrate temperature , annealing temperature and added mixture on the properties of pzt thin film are studied
在实验中，我们还研究了基底温度、退火温度以及掺杂等因素对薄膜性能的影响。 - The substrate temperature during the plasma implantation has influence both on the quality of the si over - layer and the thickness of the box layer . the latter effect is probably caused by the deviated position of the hydrogen concentration peak in the as - implanted sam
另外，形成的soi结构埋层厚度也随基底温度变化而不同，这可能是氢扩散随温度变化造成浓度区位置不同从而对氧沉淀作用也不同所致。 - Tantalum oxide films were prepared by self - assembled middle frequency a . c . sputtering system . the contents and microstructure of the films were studies as the functions of oxygen percentage in sputtering gases and substrate temperature
论文采用自行组装的中频交流磁控溅射设备制备了氧化钽薄膜，考察了溅射气体中氧气含量、基底温度等对薄膜成分、结构的影响，并且通过优化工艺参数得到了接近化学计量比的氧化钽薄膜。 - The soi is of crystal quality and the box is uniform in thickness , with the interfaces of si / sioa / si smooth and sharp . we have systematically studied the dependence of the formed soi structure on the process parameters , such as ion energy , implantation dosage , substrate temperature , as well as the annealing temperature . with xtem , sims , srp , rbs , ir , raman , aes , xps and other characterization tools , it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本论文还系统地研究了不同注入剂量、注入能量、注入时基底温度以及退火温度对所形成soi结构性能的影响，借助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等测试分析手段，我们发现，与传统注氧隔离( simox )技术类似，存在着“剂量窗口”形成优质的soi材料，但在水等离子体离子注入方式中soi材料结构质量对剂量变化更为敏感，随着注入剂量的增大， soi材料的埋层厚度增大而表层硅厚度减小。