叠加电容 meaning in Chinese

overlap capacitance

Finally the method of preparation of p - si tft and some useful dates were given . the dissertation includes seven chapters . the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s , d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
本文一共分为七章:第一章介绍了本论文的研究背景、研究意义、主要工作以及国内外的研究进展;第二章介绍了tft的结构和工作原理;第三章介绍了栅极与源、漏极之间叠加电容产生的原因和自对准工艺;第四章介绍了氮化硅的制备方法和测试方法;第五章介绍了多晶硅tft有源层的制备方法并对各种晶化机理做了介绍;第六章主要对利用自对准工艺制备tft的工艺进行研究,并对制备出来的样品进行了测试;第七章对全文进行总结。