变容管 meaning in Chinese
varactor
Examples
- The vco is optimized according to the targets of low voltage - supply , low power consumption , low phase noise and large tuning range . with a voltage - supply of
与由反型mos变容管调谐的压控振荡器比较,结果表明积累型变容管调谐的vco具有更好的相位噪声性能。 - The frequency of the pulse is the same as that of the crystal oscillator . the pulses sampled the output of the vco and generate the error signal . the error signal is amplified ,
误差电压经放大后送入环路滤波器进行滤波和再放大,然后去改变变容管偏置电压,控制振荡器输出频率,达到稳频的目的。 - With the rapid advancement of process and technology , especially the realization of on - chip passive elements such as inductors and varactors , the on - chip implementation of voltage - controlled oscillators ( vcos ) which are necessary in wireless transceivers has become easy
在工艺技术的飞速进步下,尤其是电感和变容管等无源器件片上实现问题的解决,压控振荡器已经可以实现单片集成,这对降低收发机的成本十分关键。 - Compared with gunn diode , mesfet has the advantage of high efficiency , flexible design and easy to integrate . the two ports negative resistance oscillating network is analyzed and an extremum - line model of microwave transistor oscillating network output impedance is developed
Mesfet较之gunn二极管在vco电路中有效率高、设计灵活性、便于集成等优点，所以本文着重介绍了变容管调谐微带结构mesfetvco的研制工作。 - First of all , single port negative impedance oscillator is analyzed in the thesis . a design method of gunn diode vco is introduced and an vco chip using gunn diode is fabricated . the substrate of the vco chip is gaas with dimension of 4 . 4mmx3 . 9mm
本文首先对单端口负阻振荡器进行了分析，给出了gunn二极管负阻振荡器的设计方法，设计出了一个变容管调谐平面微带gunn二极管vco芯片，该芯片以gaas为衬底，尺寸为4 . 4mm 3 . 9mm 。