受主杂质 meaning in Chinese

acceptor impurity

The results show that v5 + whose valence changes is an acceptor impurity and after heat treatment especially at 655 . the phenomenon is consistent with the result of the dta ( differential thermal analysis ) . the result of dta indicates that v2o5 has a phase transformation absorption peak at 655 while the signal of esr of low valence of v ion is the strongest
结果表明v离子是一种受主杂质,热处理后,其价态产生了变化,尤其是在655热处理时价态变化程度最明显,与v2o5的差热分析( dta )结果相吻合,差热分析也显示, v2o5在655存在一相变吸热峰,此时样品的低价态v离子的esr信号最强。
We have investigated the influence on the character of cdte thin films with different conditions and parameters . secondly , in normal temperature , cdte thin films are high resistance semiconductor , for improving its electricity capability , we commonly inject benefactor or acceptor impurities into the pure cdte thin films , the ion influx technique is a good method among many adulteration means . at present , the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports
本论文首先采用近距离升华法在不同基片上制备cdte薄膜,研究了不同工艺条件和参数对cdte薄膜性质的影响。其次,在常温下,本征cdte薄膜均为高阻半导体。为了改善其导电性能,通常向cdte薄膜中掺入施主或受主杂质,其中离子注入技术是掺杂方法之一。