发射结 meaning in Chinese

emitter junction

According to negative temperature coefficient of vbe and positive temperature coefficient of vt , a framework of band - gap voltage reference is investigated . the reference offer a source of pir , distributed three voltage , one as upper - threshold voltage of dual - threshold comparator , the other as lower - threshold voltage of comparator , the other as direct current voltage for second band - pass filter amplifier
同时利用pnp晶体管发射结电压的负温度特性和发射结差值电压的正温度特性设计了一个带隙基准电压源。此带隙基准电压源本身作为热释电红外传感器的电源电压,同时分压提供双限电压比较器的上限电平和下限电平以及第二级带通滤波放大器的直流电平。
In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices . one is a typical of oc stress method with collector open and reverse - bias emitter - base junction . another one , a new technique , is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本论文采用两种反偏电应力方法考察器件的可靠性，一种为传统的oc应力（集电极开路，发射结反向偏置）方法，另一种为新的方法fc应力（集电结正向偏置，发射结反向偏置）方法。