反型层 meaning in Chinese
inversion layer
Examples
- And a new numerical charge - sheet model for sic mos inversion layers is presented based on an numerical solution of a one - dimension poisson equation
文中还提出了一个新的sicmosfet反型层薄层电荷数值模型。 - Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
对6h sic反型层迁移率进行的moniecaro模拟结果表明，库仑中心的相关性，库仑电荷量及电荷中心和sic侣。 - A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 - Firstly , a new interface roughness scattering model is developed using exponential autocovariance functions . the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data
先推导了一种sic反型层表面粗糙散射的指数模型，研究证明应用此模型能够更精确地研究sicmos沟道载流子的输运规律。 - It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。