反向击穿 meaning in Chinese
reverse breakdown
Examples
- Measuring methods of photocell - inverse breakdown voltage
光电池测量方法反向击穿电压 - Breakdown reverse voltage
反向击穿电压 - A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt
室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压 - High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。