反偏 meaning in Chinese

reversal of biasing

Devr - v series high - temperature reverse bias burn - in system
Devr - v系列高温反偏老化系统
Amplified back bias
放大的反偏压
The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region . the relationship of the ideality factor to the applied voltage is theoretically studied
提出了中子辐照下sicpn结电特性退化的新的理论， pn结耗尽区中的辐照陷阶在耗尽区电场的作用下热发射效应得到加强，从而导致pn结正偏和反偏时的复合电流和产生电流的改变。
In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices . one is a typical of oc stress method with collector open and reverse - bias emitter - base junction . another one , a new technique , is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本论文采用两种反偏电应力方法考察器件的可靠性，一种为传统的oc应力（集电极开路，发射结反向偏置）方法，另一种为新的方法fc应力（集电结正向偏置，发射结反向偏置）方法。