反位缺陷 meaning in Chinese
antisite defect
Examples
- Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication . at present there are variations in electrical properties across substrate slices . these are associate with deep levels , in particular el2 , which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses
研究证明， si - gaas衬底电学特性的不均匀与材料中深能级微缺陷，特别是el _ 2 (深能级施主，被认为是as的反位缺陷的复合体)有极大的关系，而这些深能级微缺陷又与热应力形成的长入位错有密切联系。