双极器件 meaning in Chinese

bipolar device

According to the characteristics of sige hbt , such as holding high performance as gaas which can meet the demand with rf ics and having low cost because of the compatibility with si technology , sige hbt has become one of the hot fields in the world
由于sige异质结双极器件( hbt )既能像gaas器件一样满足rfics对高性能要求,又可以与si工艺兼容而具有低成本的优点,所以成为国内外研究的热点课题之一。
With the kind of design of 0 . 5 - 6ghz wlna , a new type of amplifier with on / off function , based on sige device , is presented , which is improved by adopting parasitic parameter with sige hit - kit 0 . 35 m bicmos process . at present simulation is finished successfully , and the amplifier is coming to be commercialized
论文提出了具有开关功能的低功耗sige双极器件的新型放大器和利用寄生电感来设计电路的新思路,同时在工艺上采用sigehit - kit0 . 35 mbicmos工艺来制作平面电感和有源器件,成功完成了0 . 5 - 6ghz微波宽带低噪声放大器的前期仿真和设计工作。