半导体激光二极管 meaning in Chinese
semiconductor laser diode
Examples
- Blank detail specification for semiconductor laser diodes
半导体激光二极管空白详细规范 - Detail specification for semiconductor laser diode modules for type gj1325
Gj1325半导体激光二极管组件详细规范 - Semiconductor optoelectronic devices . detail specification for types gj9031t and gj9032t and gj9034t semiconductor laser diodes
半导体光电子器件. gj9031t gj9032t和gj9034t型半导体激光二极管.详细规范 - It has a broader absorption band at 808 nm which is emitted by laser diode ( ld ) . therefore , nd : cngg is suitable for ld pumping , the ld pumped all solid - state lasers can be made by using nd : cngg . in this study , nd : cngg single crystals of 25mm in diameter and above 80mm in length were successfully grown by the automatically pulling method from the melt
掺钕钙铌镓石榴石(简称nd : cngg )是一种新型激光晶体,该晶体熔点低( 1470 ) ,具有无序结构,在通用的808nm半导体激光二极管( ld )发射波长区有宽吸收带,因此很适合ld泵浦,可做成ld泵浦全固态激光器。 - Because quasi - fermi levels of a laser diode ( ld ) vary with the carrier density , it is predicted that a new type of hysteresis loop should occur for the current passing ld while a hysteresis loop appears on the power - frequency curve of the ecld . an explicit analytical expression for the frequency width of the hysteresis loop and the condition for the formation of the hysreresis loop has been deduced
预测了由于半导体激光二极管( ld )的准费米能级之差随ld内线流子密度的变化而变化，因而，在调谐外腔半导体激光器的输出功率?振荡频率曲线上出现双稳环的时候，通过ld的电流也应出现一个伴随的新型双稳环? ?电流双稳环。