化学气相沉积金刚石 meaning in Chinese
cvd
Examples
- In situ reflectivity measurement of cvd diamond thin film
化学气相沉积金刚石薄膜生长的原位反射率测量 - Using the microwave selective heating property for materials , by setup equivalent equation , and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd , three temperature distribution modes were established , including temperature distribution comprehensive mode of inhomogeneous plasma , temperature distribution composite mode of composite substrate materials , temperature distribution perturbation mode of composite materials , which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate . and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter . as an important part , this thesis researched the nucleation and growth of diamond films in mpcvd , systematically researched the effects of substrate pretreatment , methane concentration , deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd , characterized the films qualities in laser raman spectra ( raman ) , x - ray diffraction ( xrd ) , scanning electron microscopy ( sem ) , infrared transmission spectra ( ir ) , atomic force microscopy ( afm ) , determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system
该系统可通过沉积参数的精确控制，以控制沉积过程，减少金刚石膜生长过程中的缺陷，并采用光纤光谱仪检测分析等离子体的可见光光谱以监测微波等离体化学气相沉积过程；利用微波对材料的选择加热特性，通过构造等效方程，并首次将电磁场摄动理论引入到mpcvd的基片加热材料的设计中，建立了非均匀等离子体温度场综合模型、复合介质基片材料的复合温度场模型及复合介质材料温度场摄动模型，为mpcvd的基片加热系统设计提供了一条全新的技术路线以指导基片加热材料的制备，并对基片加热材料进行了设计和优选，以获取大面积均匀的温度场区，甚至获得大于基片台尺寸的均匀温度区；作为研究重点之一，开展了微波等离体化学气相沉积金刚石的成核与生长研究，系统地研究了在( 100 )单晶硅基片上mpcvd沉积金刚石膜的实验过程中，基片预处理、甲烷浓度、沉积气压、基体温度等不同实验工艺参数对金刚石薄膜质量的影响，分别用raman光谱、 x射线衍射( xrd ) 、扫描电镜( sem ) 、红外透射光谱( ir ) 、原子力显微镜( afm )对薄膜进行了表征，确立了该系统上mpcvd金刚石膜的最佳的实验工艺参数。 - Typical temperature is 800 - 1000 in cvd diamond process , while the high temperature limits its application in optical window and coating such as gaas , zns etc . low temperature can not only make diamond crystal nucleus finer , reduce surface roughness of diamond films and lessen light dispersion , but also eliminate thermal stress
化学气相沉积金刚石膜过程中，衬底的典型温度为800 1000 ，这么高的温度限制了其作为gaas 、 zns等低熔点光学材料窗口和涂层的应用。低温沉积金刚石膜不仅可以使晶粒细化，降低表面粗糙度，减小光的散射作用，而且可以消除热应力。