势垒层 meaning in Chinese
barrier layer
barrier region
Examples
- Electrons from the metal will have to surmount the potential barrier to enter the semiconductor .
金属中的电子必须克服这个势垒层才能进入半导体。 - Electronic structure and magnetic properties of ce1 - xyxfe2 compounds
势垒层表面态及其他局域态性质研究 - Shockley barrier layer
肖克利势垒层 - Influence of polarizations and doping in algan barrier on the two - dimensional electron - gas in algan gan heterostruture
异质结构中极化与势垒层掺杂对二维电子气的影响 - By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing
采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。