动力学平衡 meaning in Chinese
kinetic balance
kinetic equilibrium
Examples
- If the dynamic balance were destroyed , cell would proliferate abnormally , apoptosis , necrosis , carcinogenesis
如果这种动力学平衡被破坏，细胞的正常生长就会受到影响，导致癌变或衰老死亡。 - The process of flashing involves ionization on the dirty surface concerning the factors of electric , heat and chemicals , thermal dynamic equilibrium process of local electric arc occurrence and development
污闪是一种与电、热和化学因素有关的污秽表面气体电离及局部电弧发生、发展的热动力学平衡过程。 - The process of flashing involves ionization on the dirty surface concerning the factors of electric , heat and chemicals , thermal dynamic equilibrium process of local electric arc occurrence and development
摘要污闪是一种与电、热和化学因素有关的污秽表面气体电离及局部电弧发生、发展的热动力学平衡过程。 - The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
采用pld技术进行了碳氮化合物薄膜沉积，得到了含氮量为21at的cn薄膜；研究了衬底温度和反应气体压强对薄膜结构特性的影响，给出了cn薄膜中n含量较小、 sp ~ 3键合结构成分较少和薄膜中仅含有局域cn晶体的原因；引入脉冲辉光放电等离子体增强pld的气相反应，给出了提高薄膜晶态sp ~ 3键合结构成分和薄膜的含n量可行性途径；应用pe - cvd技术以ch _ 4 + n _ 2为反应气体并引入辅助气体h _ 2 ，得到了含n量为56at的晶态cn薄膜；探讨了cn薄膜形貌、成分、晶体结构、价键状态等特性及其与气体压强和放电电流的关系，证明了- c _ 3n _ 4薄膜沉积为满足动力学平衡条件的各种反应过程的竞争结果；采用光学发射谱技术对cn薄膜生长过程进行了实时诊断，得到了实验参量对等离子体中活性粒子相对浓度和气相反应过程的影响规律，给出了cn薄膜沉积的主要反应前驱物，揭示了cn薄膜特性和等离子体内反应过程之间的联系；采用高气压pe - pld技术研究了不同衬底温度条件下cn化合物薄膜的结构特性，揭示了si原子对薄膜生长过程的影响，给出了si基表面碳氮薄膜的生长模式；在金刚石研磨和催化剂fe处理的si衬底上进行cn薄膜沉积，证明了通过控制材料表面动力学条件可以改变碳氮薄膜结构特性，并可显著提高晶态碳氮材料的生长速率。