低剂量辐照 meaning in Chinese
low dose irradiation
Examples
- Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟 - This research has closed relationship with a wide range of cross - science areas , such as basic research on cancer therapy by heavy ion radiation method , radiation danger level evaluation in space and biological damage induced by long term , low - level dose radiation environment , etc . dna is the carrier of biological information and the main target of biological effects induced by ionizing radiations
从重离子治癌的基础性和先导性的研究，载人航天飞行过程中的太空辐射危险性评估，到长期在低剂量辐照环境下的放射性对机体损伤等等，都与电离辐射所致生物损伤的研究有着密切的关系。 dna (脱氧核糖核酸)是生命信息的载体，也是辐射生物效应的最主要的靶分子。 - An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry
该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。