位错密度 meaning in Chinese
density of dislocations
dislocation concentration
dislocation density
dislocation desity
epd
Examples
- Gallium arsenide single crystal - determination of dislocation density
砷化镓单晶位错密度的测量方法 - There exists a strong correlation between initial surface morphology prior to ht growth and ht gan growth mechanism and eventual threading dislocation density in epilayers
发现高温生长前样品的表面状态对随后生长的gan生长机制及最终外延层中的位错密度有很大影响。 - In the relatively high dislocation density areas , dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure . here the profile of c concentration in the dimension of a cellular structure is " u " - shaped . the cell diameter increases as the dislocation density decreases , dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure
发现晶片中位错密度和分布严重影响碳的微区分布，高密度位错区，位错形成较小的胞状结构，胞内无孤立位错，碳在单个胞内呈u型分布；较低密度位错区，胞状结构直径较大，胞内存在孤立位错，碳在单个胞内呈w型分布。 - We studied the effect of laser quenching ( harden by phase transformation ) on some representative mould steels . through measuring the rigidity on the surface of samples treated by laser heat treatment , and through photographing microstructures of the steel surface , we find many reasons attribute to high hardness . these reasons include ultra - fine grains , high density dislocation and more content of carbon in martensite
我们研究的是激光淬火对几种典型模具钢的作用，通过对热处理后的试样的硬度分布的测定，用金相和电镜观察金相组织的变化，认为激光热处理产生高硬度的原因是晶粒细化、高的位错密度和高的马氏体含量。 - The experimental results showed that firstly , the distribution of resistiveity , mobility , carrier concentration , epd and ab - epd in gaas substrate was not uniform ; secondly , the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly , mesfet devices performance correlated with ab microdefects ; last , as shown by pl mapping results , it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
实验结果表明， lecsi - gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab - epd 、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高， pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。