互扩散 meaning in Chinese
interdiffuse
interdiffusion
mutual diffusion
Examples
- Xps study shows the mechanism that ohmic properties of the contacts become worse is commutative difiusion between aluminum and silicon in 6h - sic
Xps谱表明，该欧姆接触在400以上的退化的主要机制为al及sic中si的互扩散导致了金?半接触界面层的增厚。 - Auger e1ectron spectroscopic measurements indicate that the intermixing between the deposited er and the substrate si atoms ieads to the formation of ersi , with the outermost surface terminated by si atoms
Auger电子能谱（ aes ）测量结果表明，由于互扩散机制的作用，退火中反应形成的饵硅化物的最外层原子是硅原子。 - It shows that with increasing the bonding temperature and the holding time , a denser and more homogeneous microstructure consisting of less amount of pores are obtained , thereby leading to an increase in the tensile strength . an increase in
通过断口分析,认为w与cu合金的tlp连接实质是:与母材cu连接是cu 、 mn互扩散而形成的tlp连接;与母材w连接是cu - mn合金润湿w的钎焊连接。 - In order to suppress the formation of silicide interfacial layer , a zro2 thin film was deposited as a barrier layer between hfo2 and si . the samples with barrier layer exhibited better leakage and c - v character than the directly deposited ones
作为阻挡层抑制hf和a的互扩散反应，减小了界面层厚度，并提高了界面层的氧化效率，与无阻档层的样品相比电学性能得到了显著的提高。 - Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis . we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉积过微溯博士裕文搏要程中hf和出的互扩散引起的，而热氧化可以将其转化成具有较高介电常数的硅氧化物hfxsiyo 。