二次电子发射系数 meaning in Chinese
secondary electron yield
Examples
- A new model for the growth stage of surface flashover has been developed according to the experimental results , which is based on the solid band theory . it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization , the other is the micro - discharge caused by the trap centers of insulator . the trap cente
电子倍增的过程与材料的表面态直接相关，材料微观结构的变化和材料的表面处理都能够导致材料表面态的变化，引起材料的表面二次电子发射系数以及材料中陷阶密度和分布的改变，从而影响了电子倍增的过程，并进一步改变或影响了沿面闪络的发展过程。 - Based on the comparison and analysis of the secondary electron emission coefficient of two kinds of emitter gaas in theory , it is concluded that when primary electron energy is lower the deviation of secondary electron emission coefficient of two kinds of emitter gaas will become smaller , while when primary electron energy is higher the deviation will increase
通过对两种负电子亲和势二次电子发射材料的二次电子发射系数的理论值进行比较和分析，得出：当原电子入射能量较低时，两种材料的二次电子发射系数差值较小；当原电子入射能量较高时，两种材料的二次电子发射系数差值较大，而且随着原电子入射能量的升高，两种材料的二次电子发射系数差值也在增大。