临界荷重 meaning in Chinese

critical load

In this paper , plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse . this research was focused on the evaluation of film growth , hardness , stress , resistance and refractive index , by changing the experimental parameters including rf power , substrate temperature , chamber pressure , and the flow rates of teos , o2 , n2 . the results showed that the p - sio2 film was smooth , dense , and structurally amorphous
实验结果显示，用pecvd法淀积的p - sio _ 2膜是一表面平坦且致密的非晶质结构的薄膜，与硅片衬底之间有良好的附着性；在中心条件时生长速率可控制在2600a / min左右；在基板温度410时有最大的硬度可达16gpa ；其应力为压缩应力，可达- 75mpa ；薄膜的临界荷重为46 . 5un 。