uvf meaning in Chinese

北爱志愿军
乌尔斯特志愿军
紫外荧光

The defect and interface in sapphire and gan were observed by afm . we found that when the dislocation density in sapphire was lower thanl05 / cm2 , the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire . the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4 , and the mo content in gan was lower than ppm . so it was concluded that low - cost mo crucible is viable
用扫描电镜( sem ) 、 xps 、电子探针和紫外荧光光谱仪测量了蓝宝石衬底和gan外延层中的mo杂质的含量，发现蓝宝石衬底中含有mo杂质，含量约为10 ~ ( - 4 ) (质量含量) ；而在外延层gan中没有检测到mo杂质，即mo杂质含量小于ppm级。