sulfidation meaning in Chinese

硫化作用

Higher sulfidation temperatures can results in coarser fes2 grains , higher electrical resistivity and higher possibility to produce p - type thin films
硫化温度越高， fes2晶粒尺寸越大，薄膜电阻率越高，并趋于p型导电。
The influence of sulfidation pressure on microstructure is insignificant . the electrical resistivity is lower because the carrier concentration is very higher for the films annealed at lookpa sulfidation pressure
硫化压力的变化对薄膜的组织结构影响不明显，当硫化压力为100kpa时，薄膜具有较高的载流子浓度及较低的薄膜电阻率。
The effects of the sulfidation parameters on the microstructure and photoelectrical characteristics of fes _ 2 thin films have been investigated by the sulfidation annealing for the fe films under different temperature , time and pressure
本文采用不同的硫化温度、时间和压力对相同厚度的fe膜进行硫化处理来研究硫化参数对薄膜组织和光电性能的影响。
Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation . the influence of the thickness on the crystal structure , electrical resistivity , carrier concentration , absorption coefficient and energy gap of fes2 thin films have been investigated
采用硫化不同厚度的fe膜制备了不同厚度的fes2薄膜的方法，研究了不同厚度fes2薄膜的晶体结构、电阻率、载流子浓度、光吸收系数以及禁带宽度。