salicide meaning in Chinese

自对准多晶硅化物

We analyzed the mechanism of the reverse leakage current for ni - salicide shallow junction and studied the effect of the different process condition on the reverse leakage current
分析了ni - salicide浅结反向漏电流产生的机理，研究了不同的工艺条件对浅结反向漏电流的影响。
The heat - reaction characteristics of ni / si and tin / ni / si structure and the regularity for forming the nisi film have been studied deeply and formed the excellent ni - salicide shallow junction diode
文中对ni si和tin ni si的热反应特性以及nisi薄膜的形成规律进行了详细的研究。制备了优质的ni硅化物浅结二极管。
In this paper , ni - salicide process has been investigated intensively for the application to deep sub - micron coms devices . with the size of devices scaling , ni - salicide is more suitable for cmos devices than ti - salicide or co - salicide by improving salicide process
随着器件尺寸的进一步缩减，与传统的ti 、 co自对准硅化物相比， ni自对准硅化物更能适用于cmos器件对硅化物的要求。