npb meaning in Chinese
第三代环保清洗剂正溴丙烷
日本棒球机构
日本野球机构
Examples
- 4 ) npb , balq3 and tbp as dopants were doped into adn matrix
最后,研究了以rubrene作为辅助掺杂剂的有机红光发光器件,由于使用 - First , the devcice with the structure of ito / npb ( 15nm ) / alq3 ( x ) / mg : ag was prepared by thermal deposition in high vacuum . the influence of tris - ( 8 - hydroxyquinoline ) aluminum ( alq3 ) film thickness on the dvicec performance was examined
首先,制备了结构为ito / npb / alq3 / mg : ag的双层绿色发光器件,并且研究了alq3的发光层的膜厚度对绿光器件的光电性能的影响,优化了alq3的薄膜厚度。 - The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed , which was a possible alternative to achieve color display . 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated . when the balq3 dopant concentration was about 25 mol % , a high performance devcie with luminous efficiency of 1 . 0 lm / w , the peak of emission spectrum at 440 nm , the cie coordinate at ( 0 . 18 , 0 . 15 ) , and half lifetime of unencapsulated device about 950 hrs was achieved
导致本现象的原因是由于各有机层电场强度的变化影响了空穴和电子的隧穿几率,从而导致载流子的复合区域发生改变而发出不同颜色的光; 3 )制备了结构为ito / npb / adn : balq3 / alq3 / mg : ag的蓝光oled ,空穴阻挡材料balq3的掺入显著影响了oled的光电性能,当balq3的掺杂浓度为25mol %时, oled的发光效率为1 . 0lm / w ,发光光谱的峰值为440nm ,色纯度为( 0 . 18 , 0 . 15 ) ,未封装器件的半衰期达到了950小时; 4 )在蓝光材料adn中掺杂npb 、 balq3和tbp三种材料时,不仅改善了器件的发光亮度和色纯度,而且提高了器件的发光效率和寿命。 - Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ) , which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices . as to the doped devices , measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
研究结果表明， dl - a型双层结构器件ito / npb / alq / mg : ag的各项性能指标明显优于单层器件ito / alq / mg : ag ，因为前者有更好的载流子迁移率匹配以及能带匹配，因此平衡了复合的载流子数目，并且能将复合区有效控制在发光层内部，有效避免了表面的大量缺陷以及电极猝灭效应，提高了载流子的复合效率，从而提高了器件的发光性能。 - The result shows that the film thickness of alq3 has remarkable effect on the performance of oleds . in the case of alq3 film thickness of 40 nm , the highest performance device was obtained . it also indicates that the change of alq3 film thickness doesn ’ t affect the emitting spectrum of the double - layer device
结果表明,在npb的膜厚度保持在15nm的情况下, alq3的膜厚度在40nm时,器件的各方面的性能最佳;此时,启亮电压最低只有3 . 2v ,而且随电压增加而增加的亮度达到最高,稳定性和流明效率也最佳。