mqws meaning in Chinese

多量子阱

4 design of hb - led is focused on mqws and top layer . compensatory mqws for led active layers have led to good results follow the analysis in former two chapters . systematic analysis of current injection and light output via external quantum efficiency of hb - led showed mat the optimum of top layer of hb - led is appeared to be between 15 u m and 20 u m , and at least is 5 u m
根据前两章的分析设计出补偿应变多量子阱的有源区结构；然后分析计算了器件的电注入和光输出过程，指出降低顶层的电阻率和增加顶层厚度都可以使注入电流更有效地扩展到上电极外面的区域，增加厚度还可以增加器件的侧面出光。