lpcvd meaning in Chinese
低压化学气相沉积
低压化学气相淀积
低压化学汽相淀积
Examples
- Secondly , a novel technology is proposed which includes several key steps such as lpcvd ( low pressure chemical vapor deposition ) nitride silicon and cmp ( chemical mechanical polishing )
其次,设计包含低压淀积氮化硅和化学机械抛光( cmp )等关键步骤的新的soi介质隔离工艺流程。 - A design of using lpcvd silicon - rich silicon nitride of low residual stress as the resonant beam is proposed based on technology of sacrificial porous silicon and a new type peninsula structure is also proposed for high pressure sensitivity
提出了基于多孔硅牺牲层技术的利用lpcvd生长的低应力厚的富硅氮化硅作为谐振梁的压力传感器结构设计。为了提高灵敏度，还提出了一种半岛结构。 - 3 . the gap defects in multilayer cvd sic coatings could be effectively controlled by means of slow deposition in low - pressure chemical vapor deposition ( lpcvd ) . 2d c / sic composites with a multi - layer cvd sic coating prepared by slow lpcvd showed weight gain at 1300 @ in air condition
( 3 )采用慢速减压化学气相沉积工艺实现了对多层cvdsic涂层面缺陷的有效控制，实现了单一cvdsic涂层保护2dc sic在高温下( 1300 )的氧化增重。 - The tested materials include ( 100 ) silicon wafer , ( 110 ) silicon wafer , poly - silicon thin film , dry oxidized silicon dioxide thin film , wet oxidized silicon dioxide thin film , lto thin film , standard lpcvd silicon nitride film , low stress lpcvd silicon nitride film , alumni nitride film , zinc oxide film etc . in the nanoindentation experiment of the single crystal silicon , two different mechanical phases are observed at different indentation depth
用纳米压入法对( 100 )单晶硅及( 110 )单晶硅、多晶硅薄膜、干氧薄膜、湿氧薄膜、 lto薄膜、标准氮化硅薄膜、低应力氮化硅薄膜、氮化铝薄膜、氧化锌薄膜等重要材料的杨氏模量和纳米硬度进行了系统地测量。报道了单晶硅在压入过程中观测到的两个力学相的变化。 - The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber , and guarantee the carry out of the reaction . the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber , it is the container which carry out the pcr reaction , and dna sample carry out amplification reaction here . the third part is to use the sputtering , photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工艺和lpcvd技术，生长sio _ 2掩膜层和si _ 3n _ 4绝缘层，以提高反应腔的热效率，保证扩增反应的顺利进行；其次，用湿法腐蚀和干法刻蚀相结合的方法加工微型腔体，使之作为dna样品进行pcr扩增反应的容器；第三，用溅射、光刻等工艺在微型腔体底部制作微型加热器和温度传感器，实现对反应腔体的加热及其温度的精确测量，提供pcr扩增反应所需的温度条件。