heteroepitaxial meaning in Chinese
异质外延的
Examples
- The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配对异质外延超薄膜生长中成核特性的影响 - So it is an maximum challenge and difficulty to product heteroepitaxial big size high - orientation and single crystal diamond films and big area transparent diamond films in nodiamond substrate ' s surface for present diamond films " r & d
因此，目前金刚石薄膜研究面临的最大挑战和难点就是在非金刚石衬底表面异质外延生长大尺寸高取向和单晶金刚石膜以及制备大面积透明金刚石膜。 - The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process , but also incarnates the excellence of 3c - sic , so that it become for long researchful direction . due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ) , however , the 3c - sic / si study is very difficult
然而,由于3c - sic与si之间存在较大的晶格失配度(约20 % )和热膨胀系数差异(约8 % ) ,因此, 3c - sic / si异质外延薄膜的制备非常困难,仍存在许多技术问题需要克服。 - The kinetic monte carlo method based on a solid - on - solid model has been introduced to simulate the insb heteroepitaxial growth . furthermore , transmission electron microscopy ( tem ) and hall measurements have been performed to study the interface structure and electrical properties of insb epilayers
在sos ( solid - on - solid )模型基础上采用动力学蒙特卡罗( kmc )方法模拟了insb薄膜的外延生长过程,同时采用透射电镜( tem )与霍尔( hall )测试方法研究了薄膜的界面结构与电学性能。 - Up to date , it is still very hard to grow gan bulk crystals , so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices . at the same time , the rapid progress on devices requires better ohmic contact between metals and gan , so much more research work must be carried out at once
由于gan体单晶难以制备，生长高质量的薄膜单晶材料是研究开发gan基器件的基本前提条件，同时器件的发展对电极的制备提出了更高的要求，因而研究金属电极与gan的接触成为必然。