flashmemory meaning in Chinese
【计算机】快闪内存，闪存。
Examples
- Following the enhancement of process technology , the feature size of device becomes smaller , which make the density of flash memory and at the same time performance improved
随着工艺水平的不断提高，器件特征尺寸不断减小，从而使得flashmemory在容量不断增大的同时性能也在不断的改善。 - Flash memory becomes an indispensable kind of products of semiconductor memories for its advantage of high speed . its usages in today ' s computer communication and consumer electronics are wide and more popular
如今flashmemory由于其自身的高速的优势而使得它成为半导体存储器中不可或缺的一类产品，它在计算机、通讯和消费类电子产品中的应用越来越广泛，越来越普遍。 - This article firstly describes the structure and operational principle of a flash memory and analyzes the commonly used structures of its peripheral circuits . . . . . sense amplifier . then emphasizes on illustrating the design of two novel structures of sense amplifier applied in a 3v full - cmos flash memory , and then simulate them using innosis 0 . 15um process technology and obtain satisfying simulation results under different conditions
然后着重论述了两种应用3v全cmosflashmemory中的全新结构灵敏放大器，并用innosis0 . 15 m工艺，对其进行仿真，得到了不同条件下的仿真结果，结果表明新设计的全新灵敏放大器具有电路结构简单，读取速度快等优点，完全能够满足flashmemory的要求，达到了预期的目标。 - Furthermore , based on the proposed new charge pump circuit , a iv to 3 . 3v high voltage generator which is used in analog switch circuit and a 3v to 10v high voltage generator which is applied to eeprom or flash memory are designed , the components and design thought of two high voltage generators are also discussed in detail . and the simulations of two high voltage generators are accomplished by tsmc 0 . 18uw cmos technology ( t018u ) , the outcome testifies that two high voltage generators that take the new charge pump as the core circuit have the higher performance
此外，基于新型的电荷泵电路，设计了用于模拟开关电路的1v到3 . 3v的高压产生系统和用于flashmemory的3v到10v的高压产生系统，详细讨论了两种高压产生系统的电路组成和设计考虑，并用台积电0 . 18 mcmos工艺( t018u )对两种高压产生系统进行了hspice仿真，结果表明以新型电荷泵电路为核心的两个高压产生系统都具有较高的性能。