drift-diffusion meaning in Chinese

漂移扩散

On global boundedness of solutions for the drift - diffusion semiconductor equations
扩散型半导体方程解的整体有界性
The hydrodynamic and the drift - diffusion models are the most widely used models to describe semiconductor devices today
在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
As one of the several models to improve the drift - diffusion model , the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model
漂移扩散模型自上世纪五十年代初一出现，就得到了人们的广泛关注。但随着微电子技术的发展，它不能很好的解释半导体中的有些现象，流体动力学模型就应运而生了。