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apcvd meaning in Chinese

常压化学气相淀集
常压化学汽相淀积

Examples

  1. The film prepared at low temperature was amorphous tio2 and it ' s photocatalysed efficiency was very low
    Apcvd法在较低的基板温度下制备出的tio _ 2薄膜基本上是非晶态的,光催化效率很低。
  2. The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman
    对以硅烷为原料气采用常压化学气相沉积制备的薄膜,利用tem 、 hrem 、 xps 、 sem 、 raman等手段系统研究了沉积温度、退火后处理等制备工艺对薄膜微结构的影响,分析了微结构的成因。
  3. In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
    本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底,采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术,分析了cvd法生长sic的物理化学过程,通过实验提出sic薄膜生长的工艺条件,并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。
  4. The paper put forward an aim to deposit n - doped titanium dioxide film on glass substrate by the atmospheric pressure chemical vapor deposition ( apcvd ) method . using ticl4 and oa as precursors , titanium dioxide thin films had been deposited by apcvd method . nitrogen had also been doped in the film when n2o gas was added as the dopant
    在实验室条件下以ticl _ 4和o _ 2为先驱体,采用常压化学气相沉积法( apcvd )制备得到具有一定光催化性和亲水性的tio _ 2薄膜,并且以n _ 2o作为掺杂剂,对薄膜进行了n的掺杂,在一定程度上提高了薄膜可见光照射下的光催化性和亲水性。
  5. In this thesis , the history , structure . preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized . research of the novel antireflecting energy saving coating glass has also been presented . the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )
    本论文全面介绍了纳米材料,特别是纳米镶嵌复合材料的发展概况、特性、常用的制备方法、常见的几种硅系纳米材料以及有关纳米硅材料的发光,并对新型无光污染节能镀膜玻璃的研制和发展作了概述。

Related Words

  1. apcu auxiliary power control unit
  2. apcv air pumcontrol valve
  3. apcwd
  4. apcymenol
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