| 1. | Study on vacuum fabrication of ag - o - cs thin films with internal field - assisted structure
内场助结构ag - o - cs光电发射薄膜真空制备研究 |
| 2. | And it can never leave the internal fields in an undetermined state
中元素的数目的计数，并且它永远不能将内部字段保留为不确定状态。 |
| 3. | Note that this doesn t really connect to the soap web service - it only prepares some internal fields of this component
注意，这样并没有真正连接到soap web服务这只是准备好了该组件的一些内部字段。 |
| 4. | Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis . we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉积过微溯博士裕文搏要程中hf和出的互扩散引起的，而热氧化可以将其转化成具有较高介电常数的硅氧化物hfxsiyo 。 |
| 5. | Construct a three dimensional space finite element analysis model for the part which is most unfavorable for the anchorage zone of cable support tower , caculate its complexion of internal force distribution field , and study some detail costruction which impact the distribution of internal field
对最不利索塔锚固区，建立三维空间有限元分析模型，计算索塔锚固区的应力场分布情况，并研究一些细部构造对应力场分布的影响。 |
| 6. | With the aid of baffle movement , a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time . the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films , which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure . such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films , and which are considered to induce the lower - energy electrons to participate in the photoemission
通过掩膜预处理和挡板转移技术的配合，利用真空沉积方法首次制备了内场助结构ag - o - cs光电发射薄膜。 ag - o - cs薄膜内场助光电发射特性测试结果表明，该方法能够有效地实现ag - o - cs薄膜体内电场的加载与表面电极的引出，薄膜光电灵敏度随内场偏压的增大而上升。 ag - o - cs薄膜在内场作用下的光电发射增强现象与薄膜体内能带结构变化低能电子参与光电发射等物理机制有关。 |
| 7. | It was learned recently from the datang group that thanks to the joint effort on the part of technical personnel of the datang group and the siemens company , important progress has been made since the fourth quarter of 2001 when the internal field experimental network supported by three sets of td scdma base stations was put into operation
日前从大唐集团获悉，经过大唐集团和西门子公司科技人员的联手奋战，由三台td - scdma基站组成的内部现场试验网从2001年四季度开通后，迄今已经取得重大进展。 |
| 8. | It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones . when ferroelectric polarization switching occurs , the potential difference becomes even more remarkable . the origin of this phenomenon traced to the existence of internal field within the interface layer which is near the ferroelectric / electrode interface
研究发现pzt薄膜表面的电荷沉积与薄膜-底电极界面层内部的界面电场存在密切联系,由此我们建立了一个界面电场模型,定性地解释了pzt薄膜表面电荷沉积的非对称现象。 |
| 9. | The purpose of introducing ferroelectric polymeric pvdf material was to make use of the remanent polarization of ferroelectric materials and to study the effect of the internal field formed in the device during the device worked . the diodes were driven at constant voltage and were also kept under short - circuit or reverse - bias conditions
本文将具有特殊极化性能的铁电高分子材料pvdf引入器件，目的在于利用其电场下其残余极化特性，研究此种器件工作时形成的内电场情况及其对器件稳定性的影响。 |
