English translation for "沟道效应"

channel effect
channeling effect
channelizing
channelling
streaming

Example Sentences:

	1.	To minimize channeling effects, the gaas target should be misaligned from the axis of the beam . 为了使沟道效应最小，GaAs靶应稍偏离离子束的轴向。
	2.	To minimize channeling effects , the gaas target should be misaligned from the axis of the beam 为了使沟道效应最小， gaas靶应稍偏离离子束的轴向。
	3.	The source drain extension ( sde ) structure and its reliability are thoroughly studied . first , it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance . it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices 本文对深亚微米源漏扩展mos器件结构及其可靠性进行了深入研究，首先通过仿真验证了源漏扩展( sde )结构对短沟道效应的抑制， sde区寄生电阻对器件性能的影响以及sde区掺杂浓度的提高对器件性能的改善，指出了器件尺寸进一步减小后，提高源漏扩展区掺杂浓度的必要性。
	4.	The model of threshold voltage solves the problems of nonuniformly doped channel , short channel effect , implantation for adjusting threshold voltage , edge capacitance of gate , etc . not only the model can be used in ldmos , but it can perfectly describe the short channel effect of threshold voltage for all other mos devices 其中，阈值电压模型解决了沟道非均匀掺杂、短沟道效应，调阈值注入，栅边缘电容等问题。该模型不仅适用于ldmos ，也可以很好地描述所有的mos器件阈值电压的短沟道效应，严格证明了短沟道效应会引起阈值电压的减小。
	5.	This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet . its advantages are as fellow : no latch - up effect , better capability of resisting invalidation , much smaller parasitic capacitance , weaker hot - carrier effect and short - channel effects , and simpler technics , and so on 通过与体硅bjmosfet比较，讨论和分析了soibjmosfet的优点：无闩锁效应、抗软失效能力强、寄生电容大大降低、热载流子效应减弱、减弱了短沟道效应、工艺简单等。
	6.	Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet 基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高

Similar Words：

"沟道热电子" English translation, "沟道渗杂" English translation, "沟道式电容器" English translation, "沟道缩短" English translation, "沟道下切" English translation, "沟道效应多路传轮" English translation, "沟道效应辐射" English translation, "沟道效应因数" English translation, "沟道形气孔" English translation, "沟道抑制环" English translation