English translation for "偏置电压"

bias voltage

Example Sentences:

	1.	Effects of bias voltage polarity on reliable operation conditions of differential capacitive accelerometer with voltage feedback 偏置电压极性对差分电容微传感器可靠工作条件的影响分析
	2.	Choosing suitable feedback and bias voltage and creating a electrostatic servo system will raise the quantity range and stability 选择合适的反馈系数和偏置电压建立闭环控制系统,可以大大提高传感器的量程和稳定性。
	3.	Although it is possible to close multiple paths , this is practical only in dc testing , for example , to apply continuous bias voltage to a number of duts 尽管可能会闭合多条路径，但实际应用中，只有在dc测试中才会用到，例如对多个dut施加连续的偏置电压。
	4.	The effect of electrostatic force of the drive voltage on the accelerometer had been researched when the bias voltage polarity is positive - negative configuration 前人在研究驱动信号对传感器的静电力效应时，用偏置电压极性为正?负配置的驱动信号进行研究。
	5.	The frequency of the pulse is the same as that of the crystal oscillator . the pulses sampled the output of the vco and generate the error signal . the error signal is amplified , 误差电压经放大后送入环路滤波器进行滤波和再放大,然后去改变变容管偏置电压,控制振荡器输出频率,达到稳频的目的。
	6.	The low insertion loss is achieved by optimizing the transistor widths and bias voltages , by minimizing the substrate resistances , and by dc biasing the transmit and receive nodes , which decreases the capacitances while increasing the p1db 通过优化mosfet的栅宽及偏置电压可以降低插入损耗。在版图设计中通过增加衬底接触降低衬底电阻,从而减小插入损耗。另外,为接收和发送端提供直流偏置可以降低p1db 。
	7.	In chapter three , the mechanism responsible for scanning probe field - induced oxidation in ambient air is attributed to an electrochemical process , i . e . , anodic oxidation or anodization , after the analyses is given of a surface of a sample exposed to air . the effects of biases , tip speeds on morphology of field - induced oxidation , are introduced and deduced in the form of kinetics formula of oxidation growth 第三章首先通过分析大气环境下扫描探针场致氧化加工的基本特性，得出扫描探针场致氧化的加工机理为电化学阳极氧化反应；引进大气状态下场致氧化的动力学方程，推导出偏置电压与场致氧化物的几何形态两者之间的关系、扫描探针移动速度与场致氧化物的几何形态两者之间的关系。
	8.	In this paper , a three phases high - voltage power mos gate drive integrated circuit has been researched and designed successfully . it is a typical spic , which could be widely used in high power motor control and switching power supply applications . the design goal of the circuit are v0ffset ( max ) is 500v , ia ( m ~ ) is 1 a , the highest frequency of operation ( f ( ~ x ) ) is 100khz 本文研制成功了一种可广泛用于大功率电机控制、开关电源等应用中的spic电路?三相高压功率mos栅驱动集成电路，其设计指标要求为：最高偏置电压（ voffset （ max ） ）为500v 、最大输出电流（ i _ o （ max ） ）为1a 、最高工作频率为100khz 。
	9.	In the dissertation , the effects of bias voltage polarity on the measurement and the normal operation are deeply researched when the voltage polarity is positive - positive , negative - positive and negative - negative respectively . the results are compared with the ones studied by others when the voltage polarity is positive - negative . the air damping of the laterally driven microstructures is slide - film air damping 本文通过改变偏置电压极性分别为正?正、负?正、负?负，并和偏置电压极性为正?负配置时进行对比，深入研究了电容式传感器在不同偏置电压极性下，驱动信号产生的静电力对传感器检测和工作性能的影响。
	10.	We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field . the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells . it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field . the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells . incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells . the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures 对磁量子结构中电子在外加恒定电场下的输运性质进行了研究.分别计算了电子隧穿相同磁垒磁阱和不同磁垒磁阱构成的两种磁量子结构的传输概率和电流密度.计算结果表明，在相当宽广的非共振电子入射能区，外加电场下电子的传输概率比无电场时增加.对于电子隧穿相同磁垒磁阱构成的双磁垒结构，共振减弱；对于电子隧穿不同磁垒磁阱构成的双磁垒结构，无电场作用时的非完全共振在适当的偏置电压下转化为完全共振，这时的电子可实现理想的共振隧穿.研究同时表明，磁量子结构中存在着显著的量子尺寸效应和负微分电导

Similar Words：

"偏置电荷" English translation, "偏置电流" English translation, "偏置电路" English translation, "偏置电平" English translation, "偏置电位" English translation, "偏置电阻" English translation, "偏置调定频率" English translation, "偏置调整" English translation, "偏置定位槽" English translation, "偏置动量系统" English translation