轻掺杂 meaning in English
lightly doped
Examples
- The result is showed that the value of square resistence is 30 . 2 o in heavily doping area and 100 . 2o in lightly doping area
实验结果显示，重掺杂区和轻掺杂区的平均方块电阻分别为30 . 2和100 . 2 ，相差70 。 - The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。 - As far as the new technology of selective diffusion , the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon . afterwards , a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon
在选择性扩散新工艺中，我们采用丝网印刷电极的方法在硅片的电极位置印刷浓度较高的磷浆(掺磷sio _ 2乳胶) ，在非电极区喷涂一层浓度较低的磷源，扩散后形成重掺杂和轻掺杂。 - In the new structure , a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process . . the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新结构用三重扩散的方法在n ~ -单晶片上引入了n ~ +缓冲层，仍然保留了npt - igbt中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有pt - igbt中n ~ - ( n ~ + )双层复合的薄耐压层(即薄基区)的优点。