能带间隙 meaning in English

band gap

The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
Ito结构中的氧空位和锡掺杂使得它具有很强的导电性，较大的能带间隙宽度( e _ g 3ev )使得它具有很强的光透明性。
When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240 , the atomic ratio s / sn of the films increases from 0 . 72 to 1 . 08 and energy gap of the films increases from 1 . 44ev to 1 . 48ev with the increasing of the sulphurisation temperature
当硫化时间为30分钟硫化温度在240 ~ 310之间变化时,薄膜的s / sn值随着硫化温度的升高从1 . 08上升到1 . 96 ,能带间隙随着硫化温度的升高从1 . 01ev上升到1 . 72ev 。
Basing on the studying on the optical properties of the porous silicon by photoluminescence technology , this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon , puts forward the main luminescence , calculates the band gap of the porous silicon by the empirical pseudopotental method in the end
摘要在光致发光技术对多孔硅光学性质研究的基础上讨论了与多孔硅的微观结构有关的多孔硅的能带结构，用能量赝势法模拟计算出多孔硅的能带间隙。