纵向迁移 meaning in English

vertical migration

For the application of sic devices to radiation fields , it is important to know the irradiation effects and characteristics of sic materials and devices . the main contributions in this thesis are as following : temperature - and electric field - dependent electron transport in 6h - s1c is studied by single - particle monte carlo technique . the physical model used in the simulation is developed considering the main scattering mechanisms in details
为了能充分发挥sic抗辐照的优势和潜力，本文首先对sic区别于常规半导体的特性作了系统的研究：用单粒子montecarlo方法研究了6h - sic的电子输运规律，模拟的结果体现了6h - sic具有良好的高温和高场特性以及迁移率的各项异性，其横向迁移率和纵向迁移率相差近5倍。