红外吸收谱 meaning in English
infrared a orption ectrum
infrared absorption spectrum
infrareda orptio ectrum
Examples
- The substrates were biased by dc voltage negatively with respect to ground . the films were characterized by infrared spectra and x - ray photoelectron spectroscopy ( xps )
薄膜成分以红外吸收谱和x射线光电子能谱标识，薄膜形貌以原子力显微镜观测。 - Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process . the films were characterized by fourier transform infrared ( ftir ) spectroscopy . the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step . the absorption coefficient was calculated from te ( ) and re ( ) . the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg
本文还研究了立方相含量与光学带隙的关系，在n型si ( 111 )片和熔融石英片上沉积出不同体积分数的立方氮化硼薄膜，薄膜的成分由傅立叶红外吸收谱标识；用紫外-可见分光光度计测量了沉积在石英片上的bn薄膜的透射光谱te ( )和反射光谱re ( ) ，薄膜的厚度用台阶仪测得。 - The structure properties of a - sinx : h are characterized and analyzed by using ellipsometry , fourier transform infrared ( ftir ) spectroscopy and x - ray photoelectron spectroscopy ( xps ) , all the results suggest that the films with the structure of silicon dots / clusters embedding in silicon nitride matrix can be obtained by controlling the hwp - cvd conditions properly
利用椭偏仪，傅立叶红外吸收谱( ftir ) ， x射线光电子能谱( xps )等技术对a - sin _ x ： h的结构特性进行了表征与分析，结果表明，采用hwp - cvd技术合理控制实验条件，可得到镶嵌在sin _ x中的纳米si结构薄膜。