突变异质结 meaning in English

abrupt heterojunction

From the result of the practice , this structure enhances the brightness of led effectively , improves the quality of the crystal and improves the performance of the device
并且从实验结果看，双层突变异质结有效提高发光亮度，改善了器件参数，晶体质量变好。
As there is some difficulty to manufacture the graded heterojunction , we put forward that it can use double layer abrupt heteojunction to take the place of the graded heterojunction
由于渐变异质结在实现上存在一定的困难，因此我们提出了用双层突变异质结拟合渐变异质结。
The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。
Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory , and the conclusion is that it will enhance the current injection ratio , decrease the built - in voltage , improve the quality of the crystal and it will not affect the confinement to the hole
在理论上提出在hb - led器件的dh结构中使用p - n结的渐变异质结替代现行的p - n突变异质结。分析采用异质结渐变方式将增加hb - led的电流注入比，减小内建电势，改善晶体质量，并且不影响p - n结对空穴的限制。