空穴注入 meaning in English
hole injection
hole-injection
Examples
- Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole
热空穴注入的实验结果表明超薄栅氧化层的击穿不仅由注入的空穴数量决定。 - Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability , but at the same time , it will cause the reduction of brightness and efficiency
Lif作为电子注入层，能够明显提高器件的发光效率，降低器件的工作电压； cupc作为空穴注入层能够使器件稳定性提高，但也导致了亮度和效率的下降。 - The author ' s main contributions are outlined as following : first , the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method . the changes of threshold voltage have been discussed under different stress conditions
主要研究结果如下：首先，利用衬底热空穴( shh )注入技术分别控制注入到超薄栅氧化层中的热电子和空穴的数量，定量研究了热电子和空穴注入对超薄栅氧化层击穿的影响，讨论了不同应力条件下的阈值电压变化。 - When a mutually doped transitional layer is introduced , no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer , it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously
我们在器件中引入了互掺过渡层结构，发现不管在电子传输层和空穴传输层之间，还是在空穴传输层和空穴注入层之间采用这样的掺杂结构，都能够有效减少有机层间的界面缺陷态，明显提高了器件的亮度，降低了器件的工作电压。 - Using the typical moled structure glass / dbr / ito / htl / eml （ etl ） / al ， the el spectrum narrowing , intensity enhancement in the normal direction as well as emission intensity redistribution in space are observed . by the introduction of single layer silver film instead of the dbr / ito multilayer , a ( / 2 - length cavity is obtained . using this kind of microcavity , three - color single mode pl from a single material alq and three - color single mode el from double layers pvk / alq are achieved for the first time
通过以金属银替代多层结构的dbr / ito ，既作为反射镜，又作为el器件中的空穴注入电极，设计出腔长只有( / 2的超短微腔，采用同一种宽谱带材料alq作为光发射层，首次报道了三基色单模光致发光和pvk / alq双层结构的三基色单模电致发光。