离子注入法 meaning in English

ion implantation
ion injection method

3 . to avoid the high temperature process in sige cmos technics , appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source
3 .研究了离子注入法形成sigehcmos的双阱及源漏工艺。确定了注入的离子类型、剂量、能量等关键参数。
In this paper , we used different doping means to prepare the mn - doped gaas material . firstly , we incorporated mn of different dose into gaas by ion implantation , including the couple - ion implantation with mn + and c , then performed rapid thermal annealing in different temperature . furthermore , we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion
本论文利用不同掺杂方法进行了掺mngaas这种dms材料样品的制备，首先利用离子注入法对砷化镓( gaas )材料进行不同剂量的锰( mn ~ + )离子注入，其中包括加碳( c )的双离子注入，然后在不同温度下进行快速退火处理；此外还利用扩散法对gaas晶片进行不同mn扩散源(纯mn 、及mnas )的掺杂。