直接跃迁 meaning in English
direct transition
Examples
- Restarting the tutorial through the aura window , will initiate warp to the dungeon with a confirmation box
通过奥拉窗口来重置新手教程，确认后，将直接跃迁进保护区。 - Theory of semiconductor 、 absorption 、 direct transition 、 indirect transition 、 emission 、 radiation recombination 、 iradiation recombination 、 donor 、 acceptor 、 exciton 、 phonon 、 photon 、 polarition
半导体基本原理、吸收、直接跃迁、间接跃迁、辐射、发光复合、非发光复合、施子、受子、激子、声子、光子、恒化子。 - The bandgap energy of ar gas c60 thin film is 2 . 24 ev , and the bandgap energy of n2 gas film is 2 . 09 ev . both are larger than that of vacuum c60 thin films ( 2 . 02 ev )
用直接跃迁吸收边关系得出在氩气和氮气中制备的c60薄膜的禁带宽度分别为2 . 24ev和2 . 09ev ，均比在真空下生长的c60薄膜禁带宽度( 2 . 02ev )要大。 - Gan has d1rect , wide bandgap und is one of the ii1ost promising lnateria1 . 1t ' s good e1ectrica1 , opt ica1 characteristi cs and excel1ent lllecllaniczl1 properties make it one of the most ideal choices for short wave photoe1ectron devices , such as u1 travio1et photodetectors
Gan是最有前景的直接跃迁宽带隙半导体材料之一，它具有优良的光电性质和优异的机械性能，被认为是制备短波长光电子器件的最佳材料之一。 - This work was supported by the state science and technology ministry of p . r . china under the contact no . g20000683 - 06 , and by the national natural science foundation of p . r . china under grant no . 60046001 . gallium nitride is one of the 3rd generation semiconductor materials . from 1990 ' s , gan has attracted more and more attention and advanced rapidly , mainly due to its direct transition , wide band gap ( ~ 3 . 4ev ) and other excellent characters
Gan是直接跃迁的宽带隙材料，具有禁带宽度大( 3 . 4ev ，远大于si的1 . 12ev ，也大于sic的3 . 0ev ) ，电子漂移饱和速度高，介电常数小，导热性能好等特点，在光电子器件和电子器件领域有着广泛的应用前景。