电子漂移 meaning in English
electromigration
electron drift
electronic drift
Examples
- Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields
Algan / ganhemt由于具有击穿电压高、电子漂移速度快和电子浓度大等特点,已被越来越多地应用于高频及大功率领域。 - Silicon carbide is becoming the most promising semiconductor material for high temperature , high frequency and high power devices because of its superior properties such as wide band gap , high breakdown field , high electronics saturation drift velocity , and high thermal conductivity
Sic材料由于具有宽禁带、高临界击穿电场、高饱和电子漂移速度、较大的热导率等优良特性，因此成为制作高温、高频、大功率器件的理想半导体材料。 - Elastic collision and inelastic collision are considered in oxygen molecule , nitrogen molecule by electron impart . the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained . the number of electrons for excitation , ionization , dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically
考虑了各种弹性和非弹性碰撞过程，在纯氧气、纯氮气中，给出了不同简化场e n条件下的电子漂移速度和平均电子能量的变化；着重分析了激发、电离、分解及分解电离碰撞的粒子数随e n 、电子能量的变化，同时计算了激发发射光谱的波长。 - ( 2 ) the process of dc discharge in o2 / n2 mixtures with the different n2 concentration has been simulated . the dependences of number of collisions with the e / n and the energy of electron are given . it is analyzed stressfully that the process of electron - molecule collision with the e / n and the energy of electron in air at atmospheric pressure
对于o _ 2 n _ 2混合气体，模拟了不同配比条件下直流放电过程，得出了发生碰撞的粒子数随e n 、电子能量的变化；着重分析了空气中激发、电离、分解及分解电离碰撞的粒子数随e n的变化，给出了电子漂移速度和平均电子能量随e n的变化。 - Characterized by wide band gap , high breakage electric field , high thermal conductivity , high saturated electron mobility , cubic silicon carbide ( 3c - sic ) , considered as one of the most promising wide band gap semiconductors , is widely utilized in high temperature , high frequency and large power semiconductor devices
3c - sic被誉为最有潜力的宽禁带半导体材料,具有带隙宽、临界击穿电场高、热导率高、饱和电子漂移速度大等优点,是高温、高频、高功率半导体器件的首选材料。