生长的晶体 meaning in English
as grown crystal
Examples
- And that is how , on one and the same crystal , although it has grown quite naturally , completely different colours can occur , mostly in elongated columns one above the other , as if nature had piled coloured rings one on top of the other
因此，在同一个自然生长的晶体，是极有可能会出现许多不同的颜色。通常它的生长模式是顺着纵向一层一层的加上不同的颜色，就好比制作多层彩色果冻般，在每一层颜色上加上另一层不同的颜色。 - The as - grown crystals were characterization by cutting and directional , x - ray diffraction , high resolution ohmmeter , ir transmission spectroscopy , visible light absorption spectroscopy , scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ) . the ir transmittance of czt single crystals grown with cd - riched is about 53 % , while 23 % with no cd riched
采用解理实验、 x射线衍射、电学性能测试、红外透过谱测试、可见光吸收谱测试、 sem蚀坑分析、探测器的试制等分析测试方法，并首次采用正电子湮没寿命谱分析方法来研究czt单晶体的空位缺陷，综合表征了所生长的晶体的质量和性能。 - The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4 , which makes the procedure more convenient and the sedimentation more compact . based on the syntheses of the raw materials , the czochralski method was used to grow the crystal from different charges . by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition , the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing , but is related to the impurity of the charges
采用多种方法合成了用于晶体生长的yvo _ 4原料，改进了液相合成法中获得yvo _ 4沉淀的方法，使得该方法更为简便，获得的沉淀更加致密；在原料合成的基础上，采用提拉法对来源不同的生长原料进行了生长，并通过对在相同气氛下生长的晶体的紫外透过谱线的对比，指出了该吸收峰的存在与晶体生长方向及有无退火无关，进而提出该吸收峰的存在与合成原料中有无杂质有关。 - The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers . the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals . good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface
结果表明：材料内部的缺陷和欧姆接触是影响器件性能的两个关键因素，采用改进的富镉气氛下坩锅旋转下降法生长的晶体具有较低的缺陷浓度，适合制作探测器，采用au 、 c可得到欧姆接触。