洁净区 meaning in English
clean zone
uncontaminated area
Examples
- Clean work area
局部洁净区 - 10 personnel working in areas where contamination is a hazard , e . g . clean areas or areas where highly active , toxic , infectious or sensitising materials are handled , should be given specific training
对于在污染危险区（例如：洁净区或其它从事高活性、毒性、污染性和致敏性物料的区域）工作的人员，应给予特殊的培训。 - Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon . since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates , the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing . moreover , as for the technique to generate dz by rtp in lightly boron - doping samples , it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature , followed annealing and ambient of rtf as well
结果显示，对于普通轻掺硅片能形成明显的很宽的洁净区的rtp预处理工艺，应用于重掺硼样品时没有洁净区形成，所以rtp预处理获得洁净区的工艺不适用于重掺硼硅片，硼的大量掺杂对氧沉淀促进效果大于高浓度的空位对氧沉淀的洲排浙江大学硕士学位论文李春龙：直拉重掺硼硅单晶中氧沉淀的研究促进效果；大量空位的引入，有利于释放氧沉淀生长过程的内应力，适当增加重掺硼样品氧沉淀密度，减少其尺寸，并伴有层错生成。 - Then , the effect of heavily doped boron on ig of czochralski silicon was also investigated . it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature , ramping annealing respectively . for conventional high - low - high three - step ig annealing , the dz becomes narrower and bmd density is higher in hb samples than that in lb samples , as a result of hb enhancing oxygen precipitation
结果显示，单步高温热处理时重掺硼样品不能形成洁净区；降温退火中，降温速度较为缓慢( 3 / min )时能生成一定量的氧沉淀，但没有洁净区形成；普通高?低?高三步热处理过程中，形成明显的洁净区，但相对轻掺样品而言，洁净区较窄，氧沉淀密度明显偏高，说明重掺硼样品吸杂能力强。 - With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ) , rtp ( rapid thermal process ) , which consumes less time and less energy than classical thermal treatments , have been widely employed in semiconductor manufacturing . however , the most importance is that rtp is applied for defects engineering of silicon material . it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer , and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
随着大规模集成电路( vlsi )和超大规模集成电路的发展，节省时间、节省能量、容易控制的快速热退火工艺在半导体器件制造工艺中得到了广泛的应用，并且在硅材料的缺陷工程中发挥了特殊的作用，人们通过高温快速热处理在硅片中引入空位，并控制空位的分布，进而形成了具有较强内吸杂能力的洁净区。