注入条件 meaning in English
injection condition
Examples
- Abstract : a hybrid algorithm for solving carrier transport equations ofsemiconductor device is presented in this paper
文摘:针对半导体器件模拟中载流子方程两种基本算法在高注入条件下的不足，提出了一种混合算法。 - We can prove theoretically and practically that the hybrid algorithm is superior to couples and de - coupled algorithms in high implantation conditions
经过理论分析和实际计算表明：这种算法对求解高注入条件下的载流子方程是有效的。 - And then , we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks
然后，通过x射线衍射测量了样品的衍射谱，通过比较不同样品衍射峰的形状，了解了不同退火温度及注入条件下样品的晶格结构情况。 - We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。 - At last , we observed the surface morphology and magnetism of the samples by atomic force microscopy ( afm ) and magnetic force microscopy ( mfm ) , the formation of mnga and mnas magnetic precipitates was discovered and the precipitates were affected by the conditions of implantation and annealing
最后，通过原子力显微镜（ afm ）和磁力显微镜（ mfm ）观察了样品的表面形貌和磁特性，发现了退火样品中形成了磁性第二相mnga或mnas粒子，并且这些磁性粒子的磁特性与注入条件和退火条件有关。