沉淀形 meaning in English

precipitation form

We consider that the complexes of bmon ( m , n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling . therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在实验事实的基础上，我们认为在重掺硼硅单晶生长过程中， bmon ( m , n 1 )复合体或掺b引起的点缺陷能在晶体冷却过程中的较高温度阶段形成，且在随后的退火过程中能稳定存在，作为氧沉淀形核的核心，从而促进了氧沉淀，减小了大直径硅单晶中void缺陷的尺寸，增加其密度。